Semiconductor device with field shield isolation structure and a method of manufacturing the same
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United States of America Patent
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Sep 17, 1996
Issued Date -
N/A
app pub date -
Jun 13, 1994
filing date -
Oct 17, 1991
priority date (Note) -
Expired
status (Latency Note)
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Abstract
To electrically isolate a MOSFET formed on a substrate from an electrical device, a field shield electrode is buried in a substrate between the MOSFET and the electrical device so that the bottom surface of the field shield electrode is at a level deeper than each of depth levels of diffusion layers of the MOSFET and the electric device. To provide such an electrode, a trench is formed in a substrate at a level deeper than the depth levels of the diffusion layers of both the MOSFET and the electric device. After insulating an entire inner surface of the trench, an field shield electrode is buried and exposed surface of the electrode is covered with an insulating film.
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