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Abstract

A plasma processing apparatus has a cathode electrode surrounding a target film formation base set in a deposition apparatus capable of pressure reduction and arranged parallel to the target film formation base. In the plasma processing apparatus, a plasma is generated between the cathode electrode and the target film formation base by applying an RF power having a discharge frequency of 20 MHz to 450 MHz to the cathode electrode. In the plasma processing apparatus, the cathode electrode is constituted by one metal material portion and at least two dielectric portions arranged at positions to sandwich the metal material portion, and a ratio (L.sub.1 /L.sub.2) of a size (L.sub.1) of the metal material portion of the cathode electrode in an axial direction to a size (L.sub.2) of the target film formation base in the axial direction falls within a range of 0.1 to 0.45. With the plasma processing apparatus, instability and nonuniformity in plasma discharge are prevented to eliminate nonuniformity in film thickness and film quality, and a film having good characteristics is formed on a relatively large target film formation base at a high deposition speed to realize efficiency of productivity and a decrease in cost.

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First Claim