Method of decreased interlayer dielectric constant in a multilayer interconnect structure to increase device speed performance
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United States of America Patent
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Sep 24, 1996
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Dec 21, 1994
filing date -
Dec 21, 1994
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Abstract
The RC time constant of a semiconductor device is reduced by decreasing the capacitance C. The decrease in capacitance is achieved by replacing the interlayer silicon dioxide (dielectric constant of 4.0) with air (dielectric constant of 1.0). Alternatively, the air space can also be filled with another low dielectric constant material, such as an organic material having a dielectric constant in the range of about 2.2 to 3.4. In either case, the final effective dielectric constant of the device is lowered. As a result of lowering the effective dielectric constant, a smaller RC time constant is achieved, which results in higher device speed.
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