Memories with burst mode access

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United States of America Patent

PATENT NO 5559990
SERIAL NO

08328337

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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To provide a boundaryless burst mode access, a memory array is divided into two or more subarrays. Each subarray has its own row and column decoders. The columns of each subarray are divided into groups. A sense amplifier circuit is provided for each group of columns. The column decoder of each subarray selects simultaneously one column from each group so that the memory locations in one row in the selected columns have consecutive addresses. The memory locations in the selected row and columns are read by the sense amplifier circuits. While the contents of the sense amplifier circuits of one subarray are transferred one by one to the memory output, consecutive memory locations of another subarray are read to the sense amplifier circuits. In some embodiments, to save power, sense amplifier circuits are disabled when their outputs are not transferred to the memory output.

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Patent Owner(s)

  • ADVANCED MICRO DEVICES, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Briner, Michael S San Jose, CA 44 1300
Cheng, Pearl P Cupertino, CA 2 110
Yu, James C San Jose, CA 9 235

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