Method of forming a semiconductor device by activating regions with a laser light
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United States of America Patent
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Oct 1, 1996
Grant Date -
N/A
app pub date -
Feb 3, 1994
filing date -
Feb 4, 1993
priority date (Note) -
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Abstract
An improved method of forming a semiconductor device on a glass substrate is described. The method comprises forming a semiconductor film on a glass substrate, heating the semiconductor film by means of a heater to a predetermined temperature, exposing the semiconductor film to pulsed laser light after the semiconductor film has been heated to the predetermined temperature by the heating step. The thermal shock due to sharp temperature change is lessened by the pre-heating step. The width of the pulsed laser light is greater than the height when a cross section is taken perpendicular to a length.
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