Method of etching an oxide layer
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United States of America Patent
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Oct 8, 1996
Issued Date -
N/A
app pub date -
Dec 7, 1994
filing date -
Apr 28, 1994
priority date (Note) -
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status (Latency Note)
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Abstract
A method of etching an oxide layer is disclosed. First, a resist layer is formed on an oxide layer on a substrate. Next, a photosensitive layer is formed on the oxide layer and patterned to expose regions of the oxide layer to be removed. The exposed regions may overlie a nitride layer, and may overlie a structure such as a polysilicon gate. The etch is performed such that polymer deposits on the photosensitive layer, thus eliminating interactions between the photosensitive layer and the plasma. In this way, a simple etch process allows for good control of the etch, resulting in reduced aspect ratio dependent etch effects, high oxide:nitride selectivity, and good wall angle profile control.
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