Process for forming retrograde profiles in silicon
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United States of America Patent
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Oct 15, 1996
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N/A
app pub date -
Oct 27, 1994
filing date -
Oct 27, 1994
priority date (Note) -
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Abstract
A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n-or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.
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