Semiconductor structure having island forming grooves
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United States of America Patent
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Oct 15, 1996
Issued Date -
N/A
app pub date -
Jun 2, 1995
filing date -
Jun 28, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor substrate comprises a foundation, a semiconductor monocrystalline film formed on the foundation, and a high-melting-point metal film or a high-melting-point metal alloy film disposed in at least part of a region between the semiconductor monocrystalline film and the foundation. The high-melting-point metal film disposed below the semiconductor monocrystalline film can be utilized as a conductor in a semiconductor device.
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