Method for programming a nonvolatile memory
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 15, 1996
Grant Date -
N/A
app pub date -
Oct 13, 1995
filing date -
Sep 18, 1995
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for programming a nonvolatile memory cell having a control gate, a floating gate, a drain, a source, and a channel region disposed between the drain and source, the method includes the steps of applying a first voltage to the control gate to form an inversion layer in the channel region, the first voltage being varied to program at least two threshold levels of the memory cell, applying a second voltage to the drain and a third voltage to the source, the second voltage being greater than the third voltage, monitoring a current flowing between the drain and the source during the programming of the at least two threshold levels, and terminating any one of the first voltage, the second voltage, and the third voltage when the monitored current reaches a preset reference current to thereby stop the programming of the at least two threshold levels.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully