Method and circuitry for storing discrete amounts of charge in a single memory element
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United States of America Patent
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Oct 15, 1996
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N/A
app pub date -
Mar 31, 1995
filing date -
Jan 21, 1994
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Abstract
A method and circuitry for programming a memory cell to one of at least three amounts of charge. The amount of charge placed in the memory cell is increased by increasing the voltage level of a programming pulse applied to the memory cell.
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