Semiconductor memory device having self-refreshing function
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United States of America Patent
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Oct 22, 1996
Grant Date -
N/A
app pub date -
Feb 2, 1995
filing date -
Feb 3, 1994
priority date (Note) -
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Abstract
A timing generating circuit generates a signal SRE defining a period in which a self-refreshing operation is carried out based on a signal extRAS and a signal extCAS. An internal voltage down-converting circuit controls the level of an internal power supply voltage intVcc to be generated in the period defined by the signal SRE lower in the self-refreshing operation than in a normal operation. As a result, a semiconductor memory device is obtained which reduces current consumption in the self-refreshing operation by simple control in an internal circuit.
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