US Patent No: 5,569,363

Number of patents in Portfolio can not be more than 2000

Inductively coupled plasma sputter chamber with conductive material sputtering capabilities

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Abstract

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A shade is disposed on the inner wall of an inductively coupled plasma chamber, covering a protected zone of the wall generally opposite to the inductive coil driving the chamber, preventing accumulation of material sputtered from a wafer in this zone, and thus restricting closed paths for eddy current flow along the chamber wall, improving inductive coupling of electrical power to the plasma in the chamber.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
TOKYO ELECTRON LIMITEDTOKYO5610

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bayer, Robert Sinsheim, DE 67 499
Lantsman, Alexander D Middletown, NY 11 321
Seirmarco, James A Buchanan, NY 2 117

Cited Art Landscape

Patent Info (Count) # Cites Year
 
TOKYO ELECTRON LIMITED (2)
5,234,529 Plasma generating apparatus employing capacitive shielding and process for using such apparatus 193 1991
5,217,560 Vertical type processing apparatus 42 1992
 
Benzing Technologies, Inc. (1)
4,572,759 Troide plasma reactor with magnetic enhancement 45 1984
 
Branson International Plasma Corporation (1)
5,099,100 Plasma etching device and process 34 1989
 
ENERGY, UNITED STATES DEPARTMENT OF (1)
4,431,901 Induction plasma tube 69 1982
 
FUJITSU LIMITED (1)
4,486,461 Method and apparatus for gas phase treating substrates 11 1983

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
APPLIED MATERIALS, INC. (48)
6,264,812 Method and apparatus for generating a plasma 49 1995
6,254,737 Active shield for generating a plasma for sputtering 7 1996
6,190,513 Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition 33 1997
6,103,070 Powered shield source for high density plasma 11 1997
6,579,426 Use of variable impedance to control coil sputter distribution 9 1997
6,345,588 Use of variable RF generator to control coil voltage distribution 14 1997
6,565,717 Apparatus for sputtering ionized material in a medium to high density plasma 2 1997
6,297,595 Method and apparatus for generating a plasma 38 1998
6,228,229 Method and apparatus for generating a plasma 21 1998
6,132,566 Apparatus and method for sputtering ionized material in a plasma 12 1998
6,277,251 Apparatus and method for shielding a dielectric member to allow for stable power transmission into a plasma processing chamber 5 2000
7,094,316 Externally excited torroidal plasma source 8 2000
6,551,446 Externally excited torroidal plasma source with a gas distribution plate 40 2000
6,494,986 Externally excited multiple torroidal plasma source 35 2000
6,453,842 Externally excited torroidal plasma source using a gas distribution plate 39 2000
6,939,434 Externally excited torroidal plasma source with magnetic control of ion distribution 18 2002
7,430,984 Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements 1 2002
7,700,465 Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage 4 2003
7,320,734 Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage 4 2003
7,303,982 Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage 13 2003
7,137,354 Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage 14 2003
7,037,813 Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage 25 2003
6,893,907 Fabrication of silicon-on-insulator structure using plasma immersion ion implantation 43 2004
7,358,192 Method and apparatus for in-situ film stack processing 2 2004
7,223,676 Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer 8 2004
7,695,590 Chemical vapor deposition plasma reactor having plural ion shower grids 1 2004
7,291,360 Chemical vapor deposition plasma process using plural ion shower grids 9 2004
7,244,474 Chemical vapor deposition plasma process using an ion shower grid 5 2004
8,058,156 Plasma immersion ion implantation reactor having multiple ion shower grids 0 2004
7,767,561 Plasma immersion ion implantation reactor having an ion shower grid 5 2004
7,479,456 Gasless high voltage high contact force wafer contact-cooling electrostatic chuck 2 2004
7,666,464 RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor 0 2004
7,183,177 Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement 32 2004
7,294,563 Semiconductor on insulator vertical transistor fabrication and doping process 13 2004
7,166,524 Method for ion implanting insulator material to reduce dielectric constant 16 2004
7,465,478 Plasma immersion ion implantation process 3 2005
7,288,491 Plasma immersion ion implantation process 12 2005
7,094,670 Plasma immersion ion implantation process 19 2005
7,428,915 O-ringless tandem throttle valve for a plasma reactor chamber 0 2005
7,422,775 Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing 3 2005
7,312,162 Low temperature plasma deposition process for carbon layer deposition 9 2005
7,109,098 Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing 15 2005
7,429,532 Semiconductor substrate process using an optically writable carbon-containing mask 4 2005
7,335,611 Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer 8 2005
7,323,401 Semiconductor substrate process using a low temperature deposited carbon-containing hard mask 23 2005
7,312,148 Copper barrier reflow process employing high speed optical annealing 8 2005
7,291,545 Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage 14 2005
7,393,765 Low temperature CVD process with selected stress of the CVD layer on CMOS devices 7 2007
 
TOKYO ELECTRON LIMITED (10)
5,948,215 Method and apparatus for ionized sputtering 61 1997
5,800,688 Apparatus for ionized sputtering 51 1997
6,132,564 In-situ pre-metallization clean and metallization of semiconductor wafers 19 1997
6,224,724 Physical vapor processing of a surface with non-uniformity compensation 14 1998
6,268,284 In situ titanium aluminide deposit in high aspect ratio features 5 1998
6,254,745 Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source 13 1999
6,248,251 Apparatus and method for electrostatically shielding an inductively coupled RF plasma source and facilitating ignition of a plasma 10 1999
6,287,435 Method and apparatus for ionized physical vapor deposition 52 1999
6,730,605 Redistribution of copper deposited films 1 2001
6,719,886 Method and apparatus for ionized physical vapor deposition 19 2001
 
LAM RESEARCH CORPORATION (4)
7,679,024 Highly efficient gas distribution arrangement for plasma tube of a plasma processing chamber 0 2005
7,562,638 Methods and arrangement for implementing highly efficient plasma traps 0 2005
7,554,053 Corrugated plasma trap arrangement for creating a highly efficient downstream microwave plasma system 1 2005
8,048,329 Methods for implementing highly efficient plasma traps 1 2009
 
Conval, Inc. (1)
5,531,244 Hemispherical ball valve 6 1995
 
PROMOS TECHNOLOGIES INC. (1)
6,984,574 Cobalt silicide fabrication using protective titanium 2 2002
 
UNITED TECHNOLOGIES CORPORATION (1)
6,165,542 Method for fabricating and inspecting coatings 10 1998
 
VEECO INSTRUMENTS INC. (1)
7,183,716 Charged particle source and operation thereof 11 2004