US Patent No: 5,569,363

Number of patents in Portfolio can not be more than 2000

Inductively coupled plasma sputter chamber with conductive material sputtering capabilities

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Abstract

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A shade is disposed on the inner wall of an inductively coupled plasma chamber, covering a protected zone of the wall generally opposite to the inductive coil driving the chamber, preventing accumulation of material sputtered from a wafer in this zone, and thus restricting closed paths for eddy current flow along the chamber wall, improving inductive coupling of electrical power to the plasma in the chamber.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
TOKYO ELECTRON LIMITEDTOKYO5198

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bayer, Robert West Milford, NJ 54 1261
Lantsman, Alexander D Middletown, NY 10 365
Seirmarco, James A Buchanan, NY 2 122

Cited Art Landscape

Patent Info (Count) # Cites Year
 
The United States of America as represented by the United States Department of Energy (1)
* 4,431,901 Induction plasma tube 72 1982
 
Branson International Plasma Corporation (1)
* 5,099,100 Plasma etching device and process 34 1989
 
FUJITSU LIMITED (1)
* 4,486,461 Method and apparatus for gas phase treating substrates 11 1983
 
Benzing Technologies, Inc. (1)
* 4,572,759 Troide plasma reactor with magnetic enhancement 45 1984
 
TOKYO ELECTRON LIMITED (2)
* 5,234,529 Plasma generating apparatus employing capacitive shielding and process for using such apparatus 201 1991
* 5,217,560 Vertical type processing apparatus 47 1992
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
VEECO INSTRUMENTS INC. (2)
7,183,716 Charged particle source and operation thereof 19 2004
* 2004/0163,766 Charged particle source and operation thereof 5 2004
 
LAM RESEARCH CORPORATION (8)
7,679,024 Highly efficient gas distribution arrangement for plasma tube of a plasma processing chamber 0 2005
7,562,638 Methods and arrangement for implementing highly efficient plasma traps 0 2005
7,554,053 Corrugated plasma trap arrangement for creating a highly efficient downstream microwave plasma system 1 2005
* 2007/0145,021 Highly Efficient Gas Distribution Arrangement For Plasma Tube Of A Plasma Processing Chamber 7 2005
* 2007/0144,441 Methods and arrangement for implementing highly efficient plasma traps 5 2005
* 2007/0145,020 Methods and arrangement for creating a highly efficient downstream microwave plasma system 3 2005
8,048,329 Methods for implementing highly efficient plasma traps 3 2009
* 2009/0278,054 METHODS FOR IMPLEMENTING HIGHLY EFFICIENT PLASMA TRAPS 1 2009
 
Conval Inc. (1)
5,531,244 Hemispherical ball valve 6 1995
 
APPLIED MATERIALS, INC. (51)
* 6,264,812 Method and apparatus for generating a plasma 56 1995
6,254,737 Active shield for generating a plasma for sputtering 10 1996
6,190,513 Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition 40 1997
* 6,103,070 Powered shield source for high density plasma 13 1997
6,579,426 Use of variable impedance to control coil sputter distribution 16 1997
6,345,588 Use of variable RF generator to control coil voltage distribution 21 1997
* 6,565,717 Apparatus for sputtering ionized material in a medium to high density plasma 4 1997
6,297,595 Method and apparatus for generating a plasma 46 1998
* 6,228,229 Method and apparatus for generating a plasma 34 1998
* 6,132,566 Apparatus and method for sputtering ionized material in a plasma 17 1998
6,277,251 Apparatus and method for shielding a dielectric member to allow for stable power transmission into a plasma processing chamber 12 2000
7,094,316 Externally excited torroidal plasma source 9 2000
6,551,446 Externally excited torroidal plasma source with a gas distribution plate 43 2000
* 6,494,986 Externally excited multiple torroidal plasma source 38 2000
* 6,453,842 Externally excited torroidal plasma source using a gas distribution plate 42 2000
6,939,434 Externally excited torroidal plasma source with magnetic control of ion distribution 26 2002
* 2003/0226,641 Externally excited torroidal plasma source with magnetic control of ion distribution 4 2002
7,430,984 Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements 3 2002
* 2003/0047,449 Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements 3 2002
7,700,465 Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage 8 2003
7,320,734 Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage 9 2003
7,303,982 Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage 15 2003
7,137,354 Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage 20 2003
7,037,813 Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage 30 2003
* 2004/0149,218 Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage 2 2003
6,893,907 Fabrication of silicon-on-insulator structure using plasma immersion ion implantation 52 2004
7,358,192 Method and apparatus for in-situ film stack processing 32 2004
7,223,676 Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer 11 2004
7,695,590 Chemical vapor deposition plasma reactor having plural ion shower grids 24 2004
7,291,360 Chemical vapor deposition plasma process using plural ion shower grids 32 2004
7,244,474 Chemical vapor deposition plasma process using an ion shower grid 28 2004
8,058,156 Plasma immersion ion implantation reactor having multiple ion shower grids 14 2004
7,767,561 Plasma immersion ion implantation reactor having an ion shower grid 21 2004
7,479,456 Gasless high voltage high contact force wafer contact-cooling electrostatic chuck 4 2004
7,666,464 RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor 4 2004
7,183,177 Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement 42 2004
7,294,563 Semiconductor on insulator vertical transistor fabrication and doping process 17 2004
7,166,524 Method for ion implanting insulator material to reduce dielectric constant 18 2004
7,465,478 Plasma immersion ion implantation process 8 2005
7,288,491 Plasma immersion ion implantation process 17 2005
7,094,670 Plasma immersion ion implantation process 29 2005
7,428,915 O-ringless tandem throttle valve for a plasma reactor chamber 1 2005
7,422,775 Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing 13 2005
7,312,162 Low temperature plasma deposition process for carbon layer deposition 19 2005
7,109,098 Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing 25 2005
7,429,532 Semiconductor substrate process using an optically writable carbon-containing mask 15 2005
7,335,611 Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer 18 2005
7,323,401 Semiconductor substrate process using a low temperature deposited carbon-containing hard mask 41 2005
7,312,148 Copper barrier reflow process employing high speed optical annealing 18 2005
7,291,545 Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage 16 2005
7,393,765 Low temperature CVD process with selected stress of the CVD layer on CMOS devices 18 2007
 
BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD. (1)
* 9,103,026 Filter circuit for a magnetron deposition source 0 2011
 
PROMOS TECHNOLOGIES INC. (1)
6,984,574 Cobalt silicide fabrication using protective titanium 2 2002
 
TOKYO ELECTRON LIMITED (11)
* 5,948,215 Method and apparatus for ionized sputtering 70 1997
* 5,800,688 Apparatus for ionized sputtering 54 1997
* 6,132,564 In-situ pre-metallization clean and metallization of semiconductor wafers 20 1997
6,224,724 Physical vapor processing of a surface with non-uniformity compensation 16 1998
6,268,284 In situ titanium aluminide deposit in high aspect ratio features 5 1998
* 6,254,745 Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source 15 1999
* 6,248,251 Apparatus and method for electrostatically shielding an inductively coupled RF plasma source and facilitating ignition of a plasma 15 1999
* 6,287,435 Method and apparatus for ionized physical vapor deposition 59 1999
6,730,605 Redistribution of copper deposited films 1 2001
6,719,886 Method and apparatus for ionized physical vapor deposition 21 2001
* 2007/0068,795 Hollow body plasma uniformity adjustment device and method 2 2005
 
UNITED TECHNOLOGIES CORPORATION (1)
* 6,165,542 Method for fabricating and inspecting coatings 15 1998
* Cited By Examiner