Method of manufacturing multiple polysilicon TFTs with varying degrees of crystallinity
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United States of America Patent
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Oct 29, 1996
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N/A
app pub date -
Mar 8, 1994
filing date -
Mar 12, 1993
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Abstract
Method of fabricating a semiconductor circuit is initiated with formation of an amorphous silicon film. Then, a second layer containing at least one catalytic element is so formed as to be in intimate contact with the amorphous silicon film, or the catalytic element is introduced into the amorphous silicon film. This amorphous silicon film is selectively irradiated with laser light or other equivalent intense light to crystallize the amorphous silicon film.
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