Light emitting diode fabricated with resistors for variable light intensity
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United States of America Patent
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Oct 29, 1996
Issued Date -
N/A
app pub date -
Jan 27, 1995
filing date -
Dec 18, 1991
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A light emitting diode (LED) and resistors for varying the light intensity of the LED are formed on a single chip. Each of the LED portion and the resistor portion includes an active layer and a clad layer successively deposited on a substrate of the chip. The substrate may be doped with one of P-type dopant and N-type dopant and the clad layer with the other of P and Y-type dopants. A first and second electrodes are formed on an exposed surface of the substrate and the clad layer of the LED portion respectively. A plurality of resistor electrodes are formed on the clad layer of the resistor portion. It is preferable to have different spacing between the resistor electrodes to form variable resistances.
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