Area efficient high voltage MOSFETs with vertical RESURF drift regions
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United States of America Patent
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Oct 29, 1996
Issued Date -
N/A
app pub date -
May 31, 1995
filing date -
Sep 2, 1992
priority date (Note) -
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Abstract
A high voltage power transistor cell is developed that provides improved RDSon performance without sacrificing breakdown performance through utilization of trench based transistor technology. A source, drain and trench are formed within a substrate. A gate is formed or the surface over a spacing between the source and the trench. A drift region is formed around the trench. An isolation region may optionally be added allowing electrical isolation between the source and the substrate. The lateral current flow feature allows multiple high voltage power transistors, electrically isolated from one another, to exist on a single semiconductor chip. The drift region formed around the trench provides RESURF transistor characteristics without sacrificing die area.
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