Fabrication of a surface micromachined capacitive microphone using a dry-etch process
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United States of America Patent
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Nov 12, 1996
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N/A
app pub date -
Jun 19, 1995
filing date -
Jun 19, 1995
priority date (Note) -
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Abstract
Capacitive microphones are fabricated using etch-release of sacrificial silicon by an isotropic dry etchant. The process allows the production of a microphone largely from CVD processes with flexibility in materials selection. The dry etch chemistry does not require freeze-drying after release. The etchant does not attack electrodes or metallized circuitry and so allows the placement of the electrodes between the backplate and diaphragm dielectric layers. Diffusion barrier layers between the sacrificial and electrode layers protect both materials from interdiffusion during device fabrication. The process is especially fitting for a microphone comprising silicon nitride dielectric layers with aluminum electrodes.
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