Low-inductance power semiconductor module
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United States of America Patent
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Nov 12, 1996
Grant Date -
N/A
app pub date -
May 5, 1995
filing date -
Jun 17, 1994
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In the case of a power semiconductor module (1) according to the invention, substrates (8) having a power semiconductor assembly (2) are fitted on both sides of a heat sink (3). The power semiconductor assemblies (2) are made contact with by a stack of contact laminates (4), which contact laminates (4) run parallel to the heat sink (3). A very low-inductance structure is obtained thereby.
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