Chemical/mechanical planarization (CMP) apparatus and polish method
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United States of America Patent
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Nov 19, 1996
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app pub date -
Jan 11, 1996
filing date -
Jan 11, 1996
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Abstract
An improved and new apparatus and process for chemical/mechanical planarization (CMP) of a substrate surface, wherein the slurry concentration between the wafer and polishing pad is controlled through the application of an electric field between the wafer carrier and polishing platen, has been developed. The result is an increased polish removal rate and better uniformity of the planarization process.
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