Rapid process for producing a chalcopyrite semiconductor on a substrate
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United States of America Patent
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Nov 26, 1996
Grant Date -
N/A
app pub date -
May 9, 1995
filing date -
Sep 22, 1992
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Abstract
To produce a polycrystalline, single-phase compound semiconductor layer of the chalcopyrite type ABC.sub.2, it is proposed to deposit, on a substrate, a layer structure which comprises a plurality of layers and which contains the components in elemental form, as an interelemental compound or as an alloy, the component C being present in stoichiometric excess. In a rapid annealing process with a heating rate of at least 10.degree. C./s to a processing temperature of at least 350.degree. C., the layer structure is converted into the compound semiconductor ABC.sub.2 even after a few seconds, the gas exchange being limited by encapsulation of the layer structure, with the result that an evaporation of the most volatile components is prevented. Highly efficient solar cells can be produced from the semiconductor.
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