Method of forming a semiconductor material having a substantially I-type crystalline layer
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United States of America Patent
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Dec 3, 1996
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N/A
app pub date -
Sep 12, 1995
filing date -
May 15, 1984
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Expired
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Abstract
A method for forming a semiconductor material involves forming an i-type non-single crystalline layer on a substrate and crystallizing the semiconductor material by irradiation with a light having a wavelength in the range of 250 to 600 nm. Desirably, the crystals of the semiconductor material extend in column form approximately perpendicular to the substrate. Preferably, the i-type layer is doped with a recombination center neutralizer selected from hydrogen and a halogen element and the concentration of impurities forming recombination centers, such as oxygen, nitrogen, carbon, phosphorus, and boron, are maintained at 1 atomic % or less.
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