Surface treating agents and treating process for semiconductors
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United States of America Patent
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Dec 3, 1996
Grant Date -
N/A
app pub date -
Jan 9, 1995
filing date -
Jan 28, 1994
priority date (Note) -
Expired
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Abstract
The concentration of Al on silicon surface is reduced to lose its influence on the growth rate of an oxide film during thermal oxidation when semiconductor surface treatment is carried out by a process for treating semiconductor surfaces which comprises a step of cleaning surfaces of semiconductors with a semiconductor surface treating agent comprising an inorganic or organic alkali, hydrogen peroxide and water as major components, and a step of rinsing the resulting surfaces with ultra-pure water, at least one of the semiconductor surface treating agent and the ultra-pure water containing as a complexing agent a compound having three or more ##STR1## groups in the molecule or a salt thereof.
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