Gate insulated semiconductor device
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United States of America Patent
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Dec 3, 1996
Issued Date -
N/A
app pub date -
Sep 6, 1994
filing date -
Sep 7, 1993
priority date (Note) -
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Abstract
In order to provide TFTs having a low leak current property in its reverse biased state, the active semiconductor layer of the TFTs is doped with an impurity for increasing the band gap thereof, for example, carbon, nitrogen, and oxygen. Also, in order to compensate the decrease in conductivity due to the addition of the impurities, the source and drain regions are provided with or are by themselves formed with metal silicide layers. Further, these low leak current TFTs formed on a substrate are used as pixel transistors in an electro-optical device while peripheral circuits are formed on the same substrate using high mobility TFTs.
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