Fully depleted lateral transistor
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United States of America Patent
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Dec 10, 1996
Grant Date -
N/A
app pub date -
Feb 23, 1994
filing date -
Feb 24, 1993
priority date (Note) -
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Abstract
The breakdown characteristics of a lateral transistor integrated in an epitaxial layer of a first type of conductivity grown on a substrate of an opposite type of conductivity and comprising a drain region formed in said epitaxial layer, are markedly improved without recurring to critical adjustments of physical parameters of the integrated structure by forming a buried region having the same type of conductivity of the substrate and a slightly higher level of doping at the interface between the epitaxial layer and the substrate in a zone laying beneath the drain region of the transistor.
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