US Patent No: 5,585,308

Number of patents in Portfolio can not be more than 2000

Method for improved pre-metal planarization

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Abstract

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A method of forming an integrated circuit wherein a planarization step is been performed before the primary metal deposition step, but after deposition of the adhesion and barrier layers. Thus the adhesion and barrier layers are present on the sidewalls of contact holes, but do not underlie the whole extent of the primary metallization.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SGS-THOMSON MICROELECTRONICS, INC.CARROLLTON, TX823

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sardella, John C Highland Village, TX 12 175

Cited Art Landscape

Patent Info (Count) # Cites Year
 
Crosspoint Solutions, Inc. (1)
5,233,217 Plug contact with antifuse 121 1991
 
HITACHI MICROPUTER ENGINEERING LTD. (1)
5,061,985 Semiconductor integrated circuit device and process for producing the same 98 1989
 
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (1)
5,356,836 Aluminum plug process 52 1993
 
INTEL CORPORATION (1)
5,164,330 Etchback process for tungsten utilizing a NF3/AR chemistry 74 1991
 
KAWASAKI MICROELECTRONICS, INC. (1)
5,486,492 Method of forming multilayered wiring structure in semiconductor device 77 1993
 
MICRON TECHNOLOGY, INC. (1)
5,124,780 Conductive contact plug and a method of forming a conductive contact plug in an integrated circuit using laser planarization 90 1991
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
5,049,975 Multi-layered interconnection structure for a semiconductor device 117 1990

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (40)
5,658,829 Semiconductor processing method of forming an electrically conductive contact plug 21 1995
5,933,754 Semiconductor processing method of forming an electrically conductive contact plug 4 1997
6,025,271 Method of removing surface defects or other recesses during the formation of a semiconductor device 8 1997
6,245,671 Semiconductor processing method of forming an electrically conductive contact plug 1 1999
6,462,394 Device configured to avoid threshold voltage shift in a dielectric film 2 1999
6,228,772 Method of removing surface defects or other recesses during the formation of a semiconductor device 1 2000
7,067,442 Method to avoid threshold voltage shift in thicker dielectric films 1 2000
6,355,566 Method of removing surface defects or other recesses during the formation of a semiconductor device 2 2001
8,084,866 Microelectronic devices and methods for filling vias in microelectronic devices 4 2003
7,268,413 Bipolar transistors with low-resistance emitter contacts 2 2004
7,795,134 Conductive interconnect structures and formation methods using supercritical fluids 2 2005
7,863,187 Microfeature workpieces and methods for forming interconnects in microfeature workpieces 3 2005
7,622,377 Microfeature workpiece substrates having through-substrate vias, and associated methods of formation 6 2005
8,202,806 Method to avoid threshold voltage shift in thicker dielectric films 1 2005
8,536,485 Systems and methods for forming apertures in microfeature workpieces 0 2006
8,664,562 Systems and methods for forming apertures in microfeature workpieces 0 2006
7,589,008 Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods 9 2006
7,759,800 Microelectronics devices, having vias, and packaged microelectronic devices having vias 6 2006
7,749,899 Microelectronic workpieces and methods and systems for forming interconnects in microelectronic workpieces 3 2006
7,435,913 Slanted vias for electrical circuits on circuit boards and other substrates 2 2006
7,629,249 Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods 10 2006
7,902,643 Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods 20 2006
7,915,736 Microfeature workpieces and methods for forming interconnects in microfeature workpieces 3 2007
7,830,018 Partitioned through-layer via and associated systems and methods 4 2007
7,683,458 Through-wafer interconnects for photoimager and memory wafers 14 2007
7,884,015 Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods 4 2007
7,531,453 Microelectronic devices and methods for forming interconnects in microelectronic devices 16 2008
8,322,031 Method of manufacturing an interposer 0 2008
7,829,976 Microelectronic devices and methods for forming interconnects in microelectronic devices 10 2009
7,973,411 Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods 3 2009
7,956,443 Through-wafer interconnects for photoimager and memory wafers 5 2010
8,008,192 Conductive interconnect structures and formation methods using supercritical fluids 14 2010
8,367,538 Partitioned through-layer via and associated systems and methods 0 2010
8,247,907 Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods 0 2011
8,502,353 Through-wafer interconnects for photoimager and memory wafers 0 2011
8,610,279 Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods 0 2011
8,748,311 Microelectronic devices and methods for filing vias in microelectronic devices 0 2011
8,536,046 Partitioned through-layer via and associated systems and methods 0 2013
8,669,179 Through-wafer interconnects for photoimager and memory wafers 0 2013
8,686,313 System and methods for forming apertures in microfeature workpieces 0 2013
 
APPLIED MATERIALS, INC. (14)
6,066,358 Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer 30 1996
6,077,781 Single step process for blanket-selective CVD aluminum deposition 8 1996
6,001,420 Semi-selective chemical vapor deposition 50 1996
6,110,828 In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization 24 1996
6,139,905 Integrated CVD/PVD Al planarization using ultra-thin nucleation layers 5 1997
5,877,086 Metal planarization using a CVD wetting film 33 1997
6,355,560 Low temperature integrated metallization process and apparatus 6 1998
6,726,776 Low temperature integrated metallization process and apparatus 4 1999
6,430,458 Semi-selective chemical vapor deposition 6 1999
6,207,558 Barrier applications for aluminum planarization 40 1999
6,458,684 Single step process for blanket-selective CVD aluminum deposition 15 2000
6,368,880 Barrier applications for aluminum planarization 13 2001
6,743,714 Low temperature integrated metallization process and apparatus 1 2002
6,797,620 Method and apparatus for improved electroplating fill of an aperture 4 2002
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
6,140,234 Method to selectively fill recesses with conductive metal 115 1998
7,456,501 Semiconductor structure having recess with conductive metal 0 2000
 
AGERE SYSTEMS INC. (1)
5,858,873 Integrated circuit having amorphous silicide layer in contacts and vias and method of manufacture thereof 33 1997
 
LUCENT TECHNOLOGIES INC. (1)
6,028,359 Integrated circuit having amorphous silicide layer in contacts and vias and method of manufacture therefor 23 1998
 
SPANSION LLC (1)
6,251,717 Viable memory cell formed using rapid thermal annealing 2 1998
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
5,994,213 Aluminum plug process 2 1998
 
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (1)
6,458,706 Method of forming contact using non-conformal dielectric liner 2 2000
 
VLSI TECHNOLOGY, INC. (1)
5,804,502 Tungsten plugs for integrated circuits and methods for making same 3 1997

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