Polysilicon contact stud process
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United States of America Patent
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-
Dec 24, 1996
Grant Date -
N/A
app pub date -
Apr 27, 1995
filing date -
Apr 27, 1995
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A process for creating a polysilicon contact stud, to connect overlying metallizations, to underlying active device regions in a semiconductor substrate, has been developed. After filling a contact hole with insitu doped polysilicon, and overlying with a titanium film, an anneal cycle is performed to convert the unwanted portions of polysilicon to titanium silicide. The silicide is then selectively removed, leaving polysilicon only in the contact hole, thus resulting in the desired stud configuration.
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