Single MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range
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United States of America Patent
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Dec 24, 1996
Grant Date -
N/A
app pub date -
Sep 20, 1995
filing date -
Sep 20, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The size of an active pixel sensor cell is reduced by utilizing a single MOS transistor formed in a well to perform the functions conventionally performed by a photogate/photodiode, a sense transistor, and an access transistor. Light energy striking the well varies the potential of the well which, in turn, varies the threshold voltage of the transistor. As a result, the current sourced by the transistor is proportional to the received light energy.
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