Nanocrystalline layer thin film capacitors

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United States of America Patent

PATENT NO 5587870
SERIAL NO

08263521

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Abstract

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The invention relates to a method for forming a high capacitance thin film capacitor comprising forming layers of dielectric material in amorphous, nanocrystalline and polycrystalline configuration and arranging the resulting layers between upper and lower electrodes. The invention further comprises dielectric articles such as capacitors formed in accordance with the method of the invention and includes their use in an electronic circuit.

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Patent Owner(s)

Patent OwnerAddress
RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK THEP O BOX 9 ALBANY NY 12201

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anderson, Wayne A Hamburg, NY 8 283
Chang, Lin-Huang Tonawanda, NY 1 75
Jia, Quanxi Los Alamos, NM 66 716
Yi, Junsin Amherst, NY 2 75

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