Nanocrystalline layer thin film capacitors

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5587870
SERIAL NO

08263521

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

The invention relates to a method for forming a high capacitance thin film capacitor comprising forming layers of dielectric material in amorphous, nanocrystalline and polycrystalline configuration and arranging the resulting layers between upper and lower electrodes. The invention further comprises dielectric articles such as capacitors formed in accordance with the method of the invention and includes their use in an electronic circuit.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORKALBANY, NY901

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anderson, Wayne A Hamburg, NY 8 269
Chang, Lin-Huang Tonawanda, NY 1 71
Jia, Quanxi Los Alamos, NM 66 672
Yi, Junsin Amherst, NY 2 71

Cited Art Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
* 4437139 Laser annealed dielectric for dual dielectric capacitor 73 1982
 
Mitsubishi Mining & Cement Co., Ltd. (1)
* 4803591 Dielectric ceramic composition for multilayer capacitor 14 1987
 
SONY CORPORATION (1)
* 4734340 Dielectric thin film 15 1986
 
FREESCALE SEMICONDUCTOR, INC. (2)
* 5173835 Voltage variable capacitor 100 1991
* 5192871 Voltage variable capacitor having amorphous dielectric film 37 1991
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
* 4931897 Method of manufacturing semiconductor capacitive element 34 1989
 
THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK (1)
* 5390072 Thin film capacitors 36 1992
 
CANON KABUSHIKI KAISHA (1)
* 4873610 Dielectric articles and condensers using the same 24 1989
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
* 6023407 Structure for a thin film multilayer capacitor 43 1998
 
Other [Check patent profile for assignment information] (3)
* 2003/0160,274 Methods of fabricating high voltage, high temperature capacitor and interconnection structures 3 2003
* 2005/0245,025 Method of fabricating bottle trench capacitors using an electrochemical etch with electrochemical etch stop 0 2005
* 2006/0237,728 SILICON CARBIDE POWER DEVICES WITH SELF-ALIGNED SOURCE AND WELL REGIONS 3 2006
 
TESSERA ADVANCED TECHNOLOGIES, INC. (1)
* 6437968 Capacitive element 0 1999
 
POLARIS INNOVATIONS LIMITED (2)
* 6939805 Method of etching a layer in a trench and method of fabricating a trench capacitor 3 2002
* 2003/0064,591 Method of etching a layer in a trench and method of fabricating a trench capacitor 1 2002
 
Cree, Inc. (50)
6972436 High voltage, high temperature capacitor and interconnection structures 12 2001
* 2002/0030,191 High voltage, high temperature capacitor structures and methods of fabricating same 28 2001
6956238 SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL AND METHODS OF FABRICATING SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL 53 2001
* 2002/0038,891 Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel 38 2001
6767843 Method of N2O growth of an oxide layer on a silicon carbide layer 58 2001
* 2002/0072,247 Method of N2O growth of an oxide layer on a silicon carbide layer 26 2001
7067176 Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment 3 2001
6998322 Methods of fabricating high voltage, high temperature capacitor and interconnection structures 10 2003
7074643 Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same 39 2003
6979863 Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same 144 2003
* 2004/0211,980 Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same 34 2003
7022378 Nitrogen passivation of interface states in SiO2/SiC structures 8 2003
* 2004/0101,625 Nitrogen passivation of interface states in SiO2/SiC structures 1 2003
7221010 Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors 39 2003
* 2004/0119,076 Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors and methods of fabricating vertical JFET limited silicon carbide metal- oxide semiconductor field effect transistors 25 2003
7381992 Silicon carbide power devices with self-aligned source and well regions 44 2006
7727904 Methods of forming SiC MOSFETs with high inversion layer mobility 3 2006
7923320 Methods of fabricating vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors 14 2007
* 2007/0158,658 METHODS OF FABRICATING VERTICAL JFET LIMITED SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS 12 2007
8835987 Insulated gate bipolar transistors including current suppressing layers 1 2007
8710510 High power insulated gate bipolar transistors 2 2007
8288220 Methods of forming semiconductor devices including epitaxial layers and related structures 3 2009
* 2010/0244,047 Methods of Forming Semiconductor Devices Including Epitaxial Layers and Related Structures 25 2009
8294507 Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits 1 2009
8330244 Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same 5 2009
8541787 High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability 3 2009
8354690 Solid-state pinch off thyristor circuits 0 2009
8629509 High voltage insulated gate bipolar transistors with minority carrier diverter 3 2009
8193848 Power switching devices having controllable surge current capabilities 3 2009
9117739 Semiconductor devices with heterojunction barrier regions and methods of fabricating same 2 2010
9029975 Semiconductor devices with heterojunction barrier regions and methods of fabricating same 0 2010
8928108 Semiconductor devices with heterojunction barrier regions and methods of fabricating same 0 2010
8415671 Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices 7 2010
8536066 Methods of forming SiC MOSFETs with high inversion layer mobility 0 2010
8492827 Vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors 3 2011
8432012 Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same 3 2011
9029945 Field effect transistor devices with low source resistance 2 2011
9142662 Field effect transistor devices with low source resistance 3 2011
8680587 Schottky diode 6 2011
8664665 Schottky diode employing recesses for elements of junction barrier array 5 2011
8618582 Edge termination structure employing recesses for edge termination elements 1 2011
8653534 Junction Barrier Schottky diodes with current surge capability 5 2012
9673283 Power module for supporting high current densities 0 2012
9640652 Semiconductor devices including epitaxial layers and related methods 0 2012
9640617 High performance power module 0 2013
9231122 Schottky diode 0 2014
9548374 High power insulated gate bipolar transistors 0 2014
9373617 High current, low switching loss SiC power module 0 2014
9064840 Insulated gate bipolar transistors including current suppressing layers 1 2014
9595618 Semiconductor devices with heterojunction barrier regions and methods of fabricating same 0 2014
 
U.S. BANK NATIONAL ASSOCIATION (1)
* 2011/0092,045 BURIED DECOUPLING CAPACITORS, DEVICES AND SYSTEMS INCLUDING SAME, AND METHODS OF FABRICATION 5 2010
 
MICRON TECHNOLOGY, INC. (6)
* 6700771 Decoupling capacitor for high frequency noise immunity 71 2001
6955960 Decoupling capacitor for high frequency noise immunity 3 2004
7442633 Decoupling capacitor for high frequency noise immunity 2 2005
7880267 Buried decoupling capacitors, devices and systems including same, and methods of fabrication 2 2006
8114753 Buried decoupling capacitors, devices and systems including same, and methods of fabrication 3 2010
8618633 Semiconductor-on-insulator apparatus, device and system with buried decoupling capacitors 0 2012
 
USAF (1)
* 2010/0221,924 METHODS OF FORMING SIC MOSFETS WITH HIGH INVERSION LAYER MOBILITY 0 2010
 
GLOBALFOUNDRIES INC. (4)
6525427 BEOL decoupling capacitor 4 2002
6777809 BEOL decoupling capacitor 3 2002
* 2003/0089,943 BEOL decoupling capacitor 1 2002
* 2004/0195,694 BEOL decoupling capacitor 3 2004
 
TDK CORPORATION (2)
* 7808769 Dielectric device and method of manufacturing the same 1 2006
8468693 Dielectric device and method of manufacturing the same 0 2010
 
SAMSUNG ELECTRONICS CO., LTD. (3)
* 5737180 Ferroelectric capacitor structure 4 1995
* 6180482 Method for manufacturing high dielectric capacitor 7 1998
* 7416904 Method for forming dielectric layer of capacitor 0 2002
 
SUMITOMO ELECTRIC INDUSTRIES, LTD. (2)
* 5814583 Superconducting thin film and a method for preparing the same 30 1996
* 6121630 Superconducting thin film and a method for preparing the same 3 1998
 
MURATA MANUFACTURING CO., LTD. (1)
* 6935002 Method of manufacturing a nonreciprocal circuit device 0 2000
 
MOTOROLA, INC. (1)
* 5943580 Method of forming a capacitor or an inductor on a substrate 18 1997
 
THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK (1)
* 5978207 Thin film capacitor 69 1997
 
INFINEON TECHNOLOGIES AG (1)
* 2005/0176,198 Method of fabricating bottle trench capacitors using an electrochemical etch with electrochemical etch stop 12 2004
 
LG Semicon Co., Ltd. (1)
* 6025257 Method for preparing dielectric thin film and semiconductor device using same 19 1996
 
Ultrasource, Inc. (11)
6761963 Integrated thin film capacitor/inductor/interconnect system and method 21 2001
6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
6890629 Integrated thin film capacitor/inductor/interconnect system and method 10 2003
* 2004/0081,811 Integrated thin film capacitor/inductor/interconnect system and method 15 2003
* 2004/0080,021 Integrated thin film capacitor/inductor/interconnect system and method 15 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
FENG, GANG (1)
* 9728812 Electrostatic energy storage device and preparation method thereof 0 2013
 
AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (1)
* 2002/0177,287 Capacitor for integration with copper damascene processes and a method of manufacture therefore 1 2002
* Cited By Examiner