Random access memory having flash memory

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United States of America Patent

PATENT NO 5590073
SERIAL NO

08345695

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Abstract

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A semiconductor nonvolatile memory device including first and second bit lines, a buffer memory connected to the first and second bit lines, an electrically erasable programmable nonvolatile memory connected to the first and second bit lines, a writing latch circuit to which the first and second bit lines are connected in parallel and having a differential sensor type sense amplifier, and a switching circuit for switching the nonvolatile memory and the latch circuit to a nonconnected state at the time of operation of the buffer memory and switching the buffer memory and the latch circuit to a nonconnected state at the time of a writing or erasure operation on the nonvolatile memory.

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Patent Owner(s)

Patent OwnerAddress
SONY CORPORATION1-7-1 KONAN MINATO-KU TOKYO 1080075 ?1080075

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arakawa, Hideki Kanagawa, JP 58 1452
Narikiyo, Takashi Kanagawa, JP 3 410

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