Method of manufacturing a semiconductor device and a resist composition used therein
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United States of America Patent
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Jan 7, 1997
Issued Date -
N/A
app pub date -
Oct 13, 1994
filing date -
Dec 28, 1992
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a method of forming a buried impurity layer at a deep position of a semiconductor substrate, the resist configuration is prevented from sagging. A resist film having a film thickness of at least 3 .mu.m is formed on a semiconductor substrate. The resist film is exposed selectively to form an image. After exposure and before developing, the resist film is baked at the temperature of 110.degree.-130.degree. C. The resist film is developed and rinsed to form a resist pattern. The generated resist pattern is baked at a temperature of 100.degree. C.-130.degree. C. Using the resist pattern as a mask, impurity ions are implanted at high energy to the main surface of the semiconductor substrate to form a buried impurity layer at a deep position of the semiconductor substrate. Then, the resist pattern is removed.
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