Method of making a semiconductor device having a low permittivity dielectric
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United States of America Patent
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Jan 7, 1997
Issued Date -
N/A
app pub date -
Mar 16, 1995
filing date -
Oct 21, 1991
priority date (Note) -
Expired
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Abstract
A semiconductor device having electronic circuitry formed in a semiconductor substrate (11) and separated from an overlying metal interconnect layer (18,18') using a fluorinated polymer dielectric (14,14') . The fluorinated polymer layer (14,14') may be formed directly on metallic surfaces, or formed on a semiconductor or non-metallic surface using an adhesion promoter (13,13'). Once formed, the fluorinated polymer layer (14,14') can be patterned to provide vias, and covered with a patterned metal interconnect layer (18,18') .
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