US Patent No: 5,592,023

Number of patents in Portfolio can not be more than 2000

Semiconductor device

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Abstract

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A semiconductor device which comprises a first insulator, a first conductor disposed on one side near a semiconductor substrate, a second conductor disposed on the opposite side to the substrate forming a tubular member together with the first conductor, and a second insulator surrounding the member. The first insulator is incorporated into the member, and the member and the first insulator constitute an electrical wiring. Since the wiring is composed of the first insulator and the first and second conductors surrounding the first insulator, an electric current flows the tubular member of the conductors. Therefore, when the device is operated by a high-frequency (for example 80 GHz or more) electric current, apparent increase of the wiring resistance due to the 'skin effect' hardly occur and as a result, reduction of the operating speed can be prevented.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
NEC ELECTRONICS CORPORATIONKAWASAKI-SHI KANAGAWA3284

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Oda, Noriaki Kanagawa, JP 76 418

Cited Art Landscape

Patent Info (Count) # Cites Year
 
FUJITSU LIMITED (1)
4,833,519 Semiconductor device with a wiring layer having good step coverage for contact holes 40 1987
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
4,776,087 VLSI coaxial wiring structure 45 1987
 
NEC ELECTRONICS CORPORATION (1)
5,479,053 Semiconductor device with conductor clad insulator wiring 12 1993
 
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (1)
4,581,291 Microminiature coaxial cable and methods manufacture 21 1983

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
ROSENBERGER HOCHFREQUENZTECHNIK GMBH & CO. KG (3)
6,770,822 High frequency device packages and methods 63 2002
7,520,054 Process of manufacturing high frequency device packages 1 2002
8,581,113 Low cost high frequency device package and methods 0 2007
 
ADVANCED MICRO DEVICES, INC. (1)
6,147,404 Dual barrier and conductor deposition in a dual damascene process for semiconductors 12 1999
 
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (1)
8,513,742 Method for manufacturing contact and semiconductor device having said contact 0 2011
 
REMEC BROADBAND WIRELESS HOLDINGS, INC. (1)
6,667,549 Micro circuits with a sculpted ground plane 6 2002