Method of forming contact pads for wafer level testing and burn-in of semiconductor dice
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United States of America Patent
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Jan 14, 1997
Grant Date -
N/A
app pub date -
Mar 4, 1996
filing date -
Mar 4, 1996
priority date (Note) -
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Abstract
A method of forming contact pads (140) that allows for wafer level testing and burn-in of semiconductor die (22). A plurality of semiconductor die (22) are formed upon a semiconductor wafer (20), each semiconductor die (22) having a plurality of bonding pads (78). A contact pad (140) is formed overlying each bonding pad (78) and is electrically coupled to the bonding pad (78) and to wafer test pads (38) through vertical and/or horizontal wafer conductors (42-47 and 52-53 respectively) so that each semiconductor die (22) is uniquely identified. Contact pads (140) protect underlying bonding pads (78) during the formation and removal of vertical and/or horizontal wafer conductors (42-47 and 52-53 respectively). Thus, wafer level electrical testing and/or burn-in can be performed prior to designating a final packaging method for the semiconductor die (22).
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