Method for constructing ferroelectric capacitor-like structures on silicon dioxide surfaces
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United States of America Patent
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Jan 14, 1997
Grant Date -
N/A
app pub date -
Mar 19, 1996
filing date -
Mar 19, 1996
priority date (Note) -
Expired
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Abstract
A method for fabricating an integrated circuit having at least one integrated circuit component fabricated in a silicon substrate and a second device that is to be fabricated on a silicon oxide layer that covers the integrated circuit component. The integrated circuit component has a terminal that is to be connected a corresponding terminal on the second device. The second device includes an electrode structure in contact with a dielectric component that includes a layer of ferroelectric material. In the method of the present invention, a boundary layer comprising non-conducting polysilicon is deposited over the silicon oxide layer. The electrode structure is then fabricated by depositing one or more layers over the boundary layer. The ferroelectric layer is then deposited over the electrode structure and etched to provide the dielectric component. The boundary layer is then removed utilizing an etchant that etches silicon oxide much slower than polysilicon.
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