Multi-first-in-first-out memory circuit

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United States of America Patent

PATENT NO 5594702
SERIAL NO

08495867

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Abstract

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A multi-first-in-first-out (henceforth 'multi-FIFO') memory circuit in accordance with this invention comprises: (1) a plurality of groups of storage elements, for example, each group corresponds to a first-in-first-out (FIFO) memory (2) a time multiplexed first address generator for generating address signals of a storage element from a first group that is cyclically selected from the plurality of groups by a sequencer included in the first address generator and (3) a second address generator for generating address signals of a number of successive storage elements from a second group that is selected from the plurality of groups by a signal on a group request terminal of the second address generator. In one embodiment the storage elements are part of a dualport random-access-memory (RAM), and are accessed by each of the first and second address generators using a number of pairs of pointer registers that are coupled to the address generators. Each pair of pointer registers includes a read pointer register that indicates a corresponding group's next storage element to be read and a write pointer register that indicates the group's next storage element to be written.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL SEMICONDUCTOR CORPORATION12500 TI BOULEVARD M/S 3999 DALLAS TX 75243

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Wesley C San Jose, CA 1 36
Myers, Jr Roy T Santa Clara, CA 7 207
Wakeman, Larry N Mountain View, CA 4 79

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