Method for fabricating semiconductor device with interconnections buried in trenches
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United States of America Patent
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-
Jan 21, 1997
Grant Date -
N/A
app pub date -
Apr 12, 1996
filing date -
Apr 13, 1995
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A silicon oxide film is formed on a silicon substrate with a diffusion layer, and a contact hole is formed in the silicon oxide film. A protective film made of an oxide film and a nitride film is formed over the whole surface of the substrate, and the contact hole is buried with a BPSG film. Another silicon oxide film is deposited over the substrate and an interconnection trench is formed in this silicon oxide film. After the BPSG film is removed, a TiN/Ti film is formed over the whole surface of the substrate. A Cu film is grown by MO-CVD, and thereafter the Cu film and TiN/Ti film on the surface of the substrate are partially removed by CMP. A highly reliable contact plug and a trench burying higher level interconnection are formed even where contacts are margin-less or where alignment errors are present.
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