Hot carrier-hard gate oxides by nitrogen implantation before gate oxidation
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United States of America Patent
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Jan 21, 1997
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N/A
app pub date -
Oct 18, 1993
filing date -
Oct 18, 1993
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Abstract
A CMOS device is provided having a high concentration of nitrogen atoms at the SiO.sub.2 /Si interface reducing hot carrier effects associated with operating shorter devices at voltage levels typically used with longer devices. In one embodiment, the process for providing the CMOS device resistant to hot carrier effects makes use of a sacrificial oxide layer through which the nitrogen atoms are implanted and is then removed. Following removal of the sacrificial oxide layer, a gate oxide is grown giving a CMOS device having high nitrogen concentration at the SiO.sub.2 /Si interface. In an alternate embodiment, nitrogen atoms are implanted through the final gate oxide using an implantation energy which does not damage the oxide layer.
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