Semiconductor planarizing apparatus
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United States of America Patent
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Jan 28, 1997
Issued Date -
N/A
app pub date -
May 26, 1995
filing date -
May 26, 1992
priority date (Note) -
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Abstract
To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metal is during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.
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