Method for fabrication of a mask
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United States of America Patent
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-
Jan 28, 1997
Grant Date -
N/A
app pub date -
Jan 14, 1992
filing date -
Jan 14, 1991
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention relates to a method for fabrication of a mask capable of stabilizing the size and the thickness thereof. A method for fabrication of a mask according to the present invention comprises a step for successively depositing an oxide layer and a Cr layer on a quartz plate, a step for successively etching said oxide layer and said Cr layer by an E-beam, and a step for extending said oxide in volume by an oxidation process to form a phase-shifter. Therefore, the size and thickness of a mask can easily be controlled by using an oxide instead of PMMA of the photosensitive film as a phase-shifter and endurability of a mask can be improved.
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