Semiconductor device and method of fabricating the same
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United States of America Patent
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Jan 28, 1997
Issued Date -
N/A
app pub date -
Dec 21, 1995
filing date -
Jun 24, 1992
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Disclosed herein is a semiconductor device, which can effectively prevent a lower insulating layer from formation of a recess resulting from etching during formation of a groove for connecting interconnection layers with each other. In this semiconductor device, a first etching prevention film is formed on a first interlayer insulating film, so that a second interlayer insulating film is formed on the first etching prevention film.
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