Compound semiconductor and method of manufacturing the same
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United States of America Patent
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Feb 4, 1997
Issued Date -
N/A
app pub date -
Nov 14, 1994
filing date -
Feb 14, 1990
priority date (Note) -
Expired
status (Latency Note)
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Abstract
According to this invention, there is provided a compound semiconductor substrate including, on a compound semiconductor base containing a high-concentration impurity, a high-resistance single-crystal layer consisting of the same compound semiconductor as the compound semiconductor constituting the base. Active elements are formed in the high-resistance single-crystal layer.
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