Method to provide a void between adjacent conducting lines in a semiconductor device
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United States of America Patent
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Feb 4, 1997
Grant Date -
N/A
app pub date -
Jun 7, 1995
filing date -
Jun 7, 1995
priority date (Note) -
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Abstract
The invention proposes methods for producing integrated circuits wherein the dielectric constant between closely spaced and adjacent metal lines is approaching 1. One method of the invention uses low-melting-point dielectric to form a barrier from a void between conductive lines by heating the dielectric. Another method of the invention uses sidewall film to form a similar barrier.
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