Thin-film condenser
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United States of America Patent
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Feb 4, 1997
Grant Date -
N/A
app pub date -
Apr 10, 1995
filing date -
Apr 11, 1994
priority date (Note) -
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Abstract
In a thin-film condenser, a lower electrode surface layer section forming a surface in contact with a thin-film dielectric layer is made of a metal having a recrystallization temperature Tr equal to or higher than 623 K., or made of a metal having a melting point Tm equal to or higher than 1780 K. An example of such a metal is a Ni--Fe alloy containing 30% of Ni or more.
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