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Abstract

A single crystal growing method for producing a high-quality and large-diameter single crystal of a compound semiconductor with a good yield, is disclosed. A volatile element 2 is first put into a reservoir portion 1A of a quartz ampule 1. Further, a crucible 4 made of pBN, which contains a raw material 3A of a compound semiconductor, is placed in the quartz ampule 1, the vacuum sealing of which is then performed. While a vapor pressure controlling operation is performed, a furnace temperature distribution is controlled in such a manner that a vertical first temperature gradient .alpha. .degree. C./cm) in the vicinity of an outside wall of the quartz ampule corresponding to a raw melt 3B is smaller than a vertical second temperature gradient (.beta. .degree. C./cm) in a range above the top end of the crucible 4 and simultaneously, the temperature is gradually lowered. Furthermore, .alpha. ranges from 51/D.sup.2 to 102/D.sup.2 .degree. C./cm, and preferably ranges from 58/D.sup.2 to 83/D.sup.2 .degree. C./cm (incidentally, the diameter of the single crystal is D cm). Additionally, .beta. ranges from 1.06.times. to 1.72.times..degree. C./cm, more preferably, ranges from 1.19X to 1.46X .degree. C./cm ( incidentally, X is given by the following equation: X=.sqroot. R.rho./.lambda.nL), where the cooling rate of the furnace temperature and the coefficients of thermal conductivity, the specific gravity, the latent heat of melting and the formula weight of the crystal are assumed to be R .degree. C./hr, .lambda. kcal/cm.multidot.hr.multidot.K, .rho.g/cm.sup.3, L kcal/mol and n g/mol, respectively).

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