Integrated tungsten/tungsten silicide plug process
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United States of America Patent
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Feb 18, 1997
Issued Date -
N/A
app pub date -
Apr 16, 1996
filing date -
Mar 31, 1993
priority date (Note) -
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Abstract
A method of filling an opening in an insulating layer of an integrated circuit. First a tungsten-silicide layer is deposited over the opening. Next a tungsten layer is deposited onto the tungsten-silicide layer such that the opening is substantially filed with tungsten. The tungsten and tungsten-silicide layer are then chemically-mechanically polished back until the insulating layer is substantially revealed.
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