Gas sensor and manufacturing method of the same
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United States of America Patent
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-
Feb 25, 1997
Grant Date -
N/A
app pub date -
Nov 10, 1994
filing date -
Nov 11, 1993
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A thin-film gas sensor and manufacturing method of the same is disclosed which includes a silicon substrate; an insulating layer formed on the surface of the silicon substrate; a heater formed in zigzag on the surface of said insulating layer; a temperature sensor formed in zigzag on the surface of the insulating layer in parallel with the heater; an interlayer insulating layer for electrically insulating the heater and temperature sensor formed on the insulating layer; a plurality of electrodes formed on the interlayer insulating layer placed between the heater and temperature sensor; a plurality of pairs of gas sensing layers disposed in an array on the electrodes and for reacting on detected gas; and a plurality of gas shielding layers formed on one gas sensing layer out of the pair of gas sensing layers and for shielding the detected gas so that the gas sensing layers do not react on the detected gas.
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