Structure and fabrication method for a thin film transistor
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United States of America Patent
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Mar 4, 1997
Grant Date -
N/A
app pub date -
Jan 27, 1995
filing date -
Jan 27, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A structure and fabrication method for a thin film transistor which is suitable for an SRAM memory cell. The thin film transistor structure includes an insulating substrate and a semiconductor layer formed as a wall on the insulation substrate. A gate insulation film is formed on the semiconductor layer and over the entire surface of the insulation substrate. A gate electrode formed on the gate insulation film at the center part of the semiconductor layer. Impurity regions are formed in the semiconductor layer on both sides of the gate electrode.
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