Fabrication of quantum confinement semiconductor light-emitting devices
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United States of America Patent
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Mar 4, 1997
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app pub date -
Dec 29, 1995
filing date -
Oct 28, 1991
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Abstract
The present invention consists of an electroluminescent structure and method of fabrication of that structure in materials which have an indirect bandgap in their bulk form. The processing steps can all be standard VLSI methods. Quantum columns, quantum wires or quantum dots may be formed, for example in an array, by masking, reactive ion etching and oxidation. When the semiconductor core is sufficiently thin, quantum mechanical confinement effects raise the energy and the radiative recombination efficiency of injected carriers. Tuning the core diameters allows selection of individual or multiple wavelength emission bands.
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