Single split-gate MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range
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United States of America Patent
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Mar 4, 1997
Grant Date -
N/A
app pub date -
Oct 19, 1995
filing date -
Oct 19, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The size of an active pixel sensor cell is reduced by utilizing a single split-gate MOS transistor and a reset gate. The split-gate transistor includes an image collection region which is formed in the drain region and electrically connected to the floating gate of the transistor. Light energy striking the image collection region varies the potential of the floating gate which, in turn, varies the threshold voltage of the transistor. As a result, the current sourced by the transistor is proportional to the received light energy.
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