Method of making back gate contact for silicon on insulator technology
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United States of America Patent
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Mar 11, 1997
Grant Date -
N/A
app pub date -
May 20, 1996
filing date -
May 20, 1996
priority date (Note) -
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Abstract
A process for creating a back gate contact, in an SOI layer, that can easily be incorporated into a MOSFET fabrication recipe, has been developed. The back gate contact consists of a etched trench, lined with insulator, and filled with doped polysilicon. The polysilicon filled trench electrically connects the semiconductor substrate to overlying metal contacts.
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