Metallized capacitor having increased dielectric breakdown voltage and method for making the same
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United States of America Patent
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Mar 11, 1997
Issued Date -
N/A
app pub date -
Feb 18, 1994
filing date -
Feb 19, 1993
priority date (Note) -
Expired
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Abstract
A metallized film capacitor in which the metallization is made as thin as possible in order to increase the dielectric strength of the film. In the industry, typical metallization thicknesses range from approximately 1-4 ohms/sq, however, the present invention employs thicknesses which range from 5-300 ohms/sq. And, depending on which thickness is used, the effective dielectric strength of the film can be substantially increased.
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